Giant Switchable Rashba Effect in Oxide Heterostructures
نویسندگان
چکیده
منابع مشابه
Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi2Te3 Heterostructures
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In t...
متن کاملGiant ambipolar Rashba effect in the semiconductor BiTeI.
We observe a giant spin-orbit splitting in the bulk and surface states of the noncentrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases, it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is...
متن کاملSwitchable induced polarization in LaAlO3/SrTiO3 heterostructures.
Demonstration of a tunable conductivity of the LaAlO(3)/SrTiO(3) interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that t...
متن کاملGiant switchable photovoltaic effect in organometal trihalide perovskite devices.
Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm(-1). The switchable photocurrent, ge...
متن کاملMicroscopic model for the ferroelectric field effect in oxide heterostructures
Shuai Dong,1,2 Xiaotian Zhang,3,4 Rong Yu,5 J.-M. Liu,2,6 and Elbio Dagotto3,4 1Department of Physics, Southeast University, Nanjing 211189, China 2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China 3Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA 4Materials Science and Technology Division, Oak Ridge Nation...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2015
ISSN: 2196-7350
DOI: 10.1002/admi.201400445